摘要
介绍了一个基于IBM0.18μmCMOS工艺,用于无线局域网(WLAN)IEEE802.11a的带ESD保护电路的低噪声放大器(LNA)。通过分析电感负反馈共源共栅放大器的输入阻抗、增益和噪声系数,以及ESD保护电路对低噪声放大器性能的影响,对该5GHz低噪声放大器进行设计和优化。测试结果表明,当电源电压为1.8V时,消耗电流为6.5mA,增益达到10dB,输入匹配达到-18dB,噪声为4.29dB,线性度IIP3为4dBm。
A 1.8 V 5.2 GHz LNA with ESD protection for WLAN 802. lla was implemented in IBM 0. 18μm CMOS process. The LNA was optimized based on the analysis of input impedance, voltage gain and noise figure of cascode LNA with inductive degeneration. Effects of ESD protection on LNA performance were discussed. Test resuits showed that the LNA had a forward gain of 10 dB, a noise figure of 4. 29 dB, an ⅡP3 of 4 dBm and an Su of -18 dB, and the circuit dissipated 6. 5 mA of current from 1.8 V supply.
出处
《微电子学》
CAS
CSCD
北大核心
2010年第1期6-10,15,共6页
Microelectronics
基金
上海应用材料研究与发展基金资助项目(07SA04
09700713800)
纳光电教育工程中心(NPAI)资助项目
上海重点学科建设项目(B411)