摘要
准弹道输运特征的环栅纳米线MOSFET由于具备很强的栅控能力和抑制短沟道效应的能力,被认为是未来22nm技术节点以下半导体发展路线最有希望的候选者之一。采用传统CMOS工艺在SOI和体硅衬底上制备环栅纳米线MOSFET,解决了许多关键的技术难点,获得了许多突破性进展。文章综述了目前各种新颖的自顶向下制备方法和各种工艺的优缺点,以及优化的方向。
Nanowire gate-all-around （GAA） MOSFETs, which feature quasi-ballistic transport mechanism, is considered to be one of the most promising candidates beyond 22 nm technology node in the semiconductor roadmap, due to its powerful gate control and short channel effect suppression capability. Many critical technical problems have been solved and lots of breakthroughs emerge in CMOS compatible fabrication of nanowire GAA MOSFETs both on SOI and bulk substrate. Novel top-down fabrication techniques were reviewed. Their advantages and disadvantages, as well as optimization considerations, were discussed.
出处
《微电子学》
CAS
CSCD
北大核心
2010年第1期74-79,共6页
Microelectronics
