100nm P型超浅结制作工艺研究

Study on P-Type Ultra-Shallow Junction Process Using F Implantation and Rapid Thermal Annealing

介绍了一种P型超浅结的制作工艺。该工艺通过F离子注入和快速热退火技术相结合,获得了比较先进的100nm以内的P型超浅结;重点研究了影响超浅结形成的沟道效应和瞬态增强扩散效应;详细介绍了制作过程中对沟道效应和瞬态增强扩散效应的抑制。

Fabrication of P-type ultra-shallow junction was presented. By using F ion implantation and rapid thermal annealing （RTA）, a P-type ultra-shallow junction below 100 nm was obtained. Channeling effect and transient enhanced diffusion （TED） effect, which affect the formation of ultra-shallow junction, were studied in particular. Furthermore, the inhibition of the two effects, which was very important in the process,was also discussed.