极板间距对反应溅射Ge_xC_(1-x)薄膜的影响

Effect of Target-Substrate Distance on Reactive Sputtering of Ge_xC_(1-x) Films

利用射频磁控反应溅射法，以Ar、CH4为原料气体，在较宽的工艺参数范围内制备出了GexC1－x薄膜，研究了极板间距对沉积的影响。结果表明，随极板间距的减小，沉积速率增大，薄膜的均匀性变差，薄膜中Ge／C的原子比增加.

During deposition of GexC1-x films by radio frequency magnetron reactive sputtering,the deposition parameters - deposition rate, uniformity of thickness, composition, etc -influence greatly the practical application of GexC1-x films. The deposition parameters, in their turn, are influenced by target - substrate distance, RF power, negative bias and pressure. Our research investigated the influence of target - substrate distance on deposition parameters. From experiments and calculations, we got the following results: as the targetsubstrate distance decreases, the deposition rate increases (Fig. 2), thickness uniformity decreases (Fig. 3), and the atom ratio of Ge to C in GexC1-x fums increases.