多晶硅电阻负阻特性理论分析(英)

Negative - Resistance Characteristics Analysis of Polysilicon Resistors

本文提出了晶粒间界电流调整的新概念。讨论了晶粒间界的少数载流子复合以及晶粒间界的少数载流子迁移率和寿命。利用新概念对多晶硅电阻负阻特性给出了初步的理论分析。

A new concept about current adjustment of the grain boundary in polycrystalline silicon resistors has been proposed in this paper. The minority carrier recombination in grain boundary and the minority carrier mobility and lifetime in grain boundary are considered.The new concept presents a theoretical analysis to explain the origin of the observed negative-resistance characteristics of polycrystalline silicon resistors.