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Effect of Sputtering Parameters on Film Composition, Crystal Structure, and Coercivity of SmCo Based Films Deposited on Si (100) Substrates 被引量:3

Effect of Sputtering Parameters on Film Composition, Crystal Structure, and Coercivity of SmCo Based Films Deposited on Si (100) Substrates
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摘要 The sputtering parameter mediated composition (SPMC) effect of 3.0-μm-thick SmCo-based films is experimentally and theoretically studied. The experimental results give a clear indication that the Sm concentration increases with the decreasing sputtering power or with the increasing Ar gas pressure, which are in agreement with the calculated values when the preferential sputtering effect is disregarded. The SPMC effect provides an opportunity for the same composite target to fabricate films with an Sm concentration varying from 13.8at.% to 17.3at.%, which is reasonable for the magnetic phase transformation (Sm2Co17→SmCo7→SmCo5) and the enhanced coercivity. The sputtering parameter mediated composition (SPMC) effect of 3.0-μm-thick SmCo-based films is experimentally and theoretically studied. The experimental results give a clear indication that the Sm concentration increases with the decreasing sputtering power or with the increasing Ar gas pressure, which are in agreement with the calculated values when the preferential sputtering effect is disregarded. The SPMC effect provides an opportunity for the same composite target to fabricate films with an Sm concentration varying from 13.8at.% to 17.3at.%, which is reasonable for the magnetic phase transformation (Sm2Co17→SmCo7→SmCo5) and the enhanced coercivity.
出处 《Chinese Physics Letters》 SCIE CAS CSCD 2010年第1期231-233,共3页 中国物理快报(英文版)
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