摘要
Phase change random access memory （PC-RAM） based on Si2Sb2Te5 with a Pt tapered heating electrode （Pt-THE）, which is fabricated using a focus ion beam （FIB）, is investigated. Compared with the tungsten electrode, the Pt-THE facilitates the temperature rise in phase change material, which causes the decrease of reset voltage from 3.6 to 2.7 V. The programming region of the cell with the Pt-THE is smaller than that of the cell with a cylindrical tungsten heating electrode. The improved performance of the PC-RAM with a Pt-THE is attributed to the higher resistivity and lower thermal conductivity of the Pt electrode, and the reduction of the programming region, which is also verified by thermal simulation.
Phase change random access memory （PC-RAM） based on Si2Sb2Te5 with a Pt tapered heating electrode （Pt-THE）, which is fabricated using a focus ion beam （FIB）, is investigated. Compared with the tungsten electrode, the Pt-THE facilitates the temperature rise in phase change material, which causes the decrease of reset voltage from 3.6 to 2.7 V. The programming region of the cell with the Pt-THE is smaller than that of the cell with a cylindrical tungsten heating electrode. The improved performance of the PC-RAM with a Pt-THE is attributed to the higher resistivity and lower thermal conductivity of the Pt electrode, and the reduction of the programming region, which is also verified by thermal simulation.
基金
Supported by the National Basic Research Program of China under Grant Nos 2007CB935400 and 2006CB302700, the National High-Technology Development Program of China （2008AA031402）, Science and Technology Council of Shanghai （0752nm013, 07QA14065, 07SA08, 08DZ2200700, 08JC1421700）, the National Nature Science Foundation of China （60776058）, and Chinese Academy of Sciences （083YQA1001）.
