摘要
化合物半导体集成电路具有超高速、低功耗、多功能、抗辐射等特性而被和泛应用.GaAs、GaN、SiC为主要应用的化合物半导体材料。简单介绍化合物半导体材料和硅材料对比下的优势及由GaAs、GaN、SiC构成的部分器件的工作原理及特性。
Compound semiconductor integrated circuits with ultra-high speed, low power, multi-functional, anti-radiation properties is widely used, GaAs, GaN, SiC as the main application of compound semiconductor materials. This article describes the advantages of compound semiconductor materials, and from GaAs, GaN, SiC formed part of the device.
作者
郝斌
温凯
HAO Bin, WEN Kai (Tianjin Polytechnic University, Tianjin 300160,China)
出处
《电脑知识与技术》
2010年第02Z期1238-1239,共2页
Computer Knowledge and Technology