退火对Fe（200nm）／Si系统中硅化物的形成和微结构的影响

Influences of Annealing on the Formation and the Microstructures of Silicides in the System of 200 nm Fe on Si

采用直流磁控溅射方法，在Si（100）衬底上沉积厚约200nm纯金属Fe膜，随后在真空退火炉中不同退火条件下对样品进行热处理，形成Fe—Si化合物薄膜，利用X-射线衍射（XRD）和扫描电子显微镜（SEM）对Fe—Si化合物进行表征分析，研究了退火条件对厚膜系统中Fe—Si化合物薄膜的形成、晶体结构和表面形貌的影响。

Pure metal Fe films about 200 nm were deposited on Si （100） substrates by DC magnetron sputtering, subsequent thermal treatments were performed and the Fe-Si compounds were formed in a vacuum furnace in various annealing conditions. The formation of the Fe-Si compounds and their crystal structure were analyzed by X-ray diffraction （XRD） and the microstrnctures of the film were characterized by scanning electron microscope （SEM）. The effects of annealing condition on crystal formation and structures of Fe-Si compounds were researched in thick film system.