期刊文献+

采用νMOS管的多值计数器设计

Design of multi-valued counter based on νMOS
下载PDF
导出
摘要 通过对νMOS管特性和多值逻辑电路设计原理的研究,本文提出一种新型多值计数器的设计方案。该方案利用νMOS管具有多输入栅加权信号控制及浮栅上的电容耦合效应等特性,结合二值逻辑编码方法,实现电路的多值输出。用PSPICE对所设计的电路模拟验证,结果表明,所设计的电路逻辑功能正确,结构简单,功耗低,且通用性强,易于实现。 Through the research on the characteristics of vMOS and the principles of multi-valued logic circuits, this paper presents a design scheme of multi-valued counter. Two-valued coding method and vMOS characteristics, including multiple-input signals threshold operation and the floating gate capacitance coupling effect, are integrated together to implement this proposed scheme. PSPICE simulation is selected to verify the proposed circuit. The simulation results indicate that this multi-valued counter can provide correct logic function, and has characters including simple structure, low power and easy in realization.
出处 《电路与系统学报》 CSCD 北大核心 2010年第1期55-58,共4页 Journal of Circuits and Systems
基金 国家自然科学基金(60776022) 浙江省科技计划项目(2008C21166) 浙江省教育厅重点科研项目(20061666) 宁波大学博士 教授基金
关键词 νMOS管 多值逻辑 多值计数器 vMOS multi-valued logic multi-valued counter
  • 相关文献

参考文献5

二级参考文献55

  • 1[1]Shibata T,Ohmi T.IEDM Tech Digest,1991:919
  • 2[2]Shibata T,Ohmi T.IEEE Trans Electron Devices,1992;39(6):1444
  • 3[3]Ohmi T,Shibata T.IEICE Trans Electron,1997;E80-C(7):841
  • 4[4]Tsividis Y,Satyanarayana S.Electronics Letters,1987;23(24):1313
  • 5[6]Kotani K,Shibata T,Ohmi T.IEDM Tech Digest,1992:431
  • 6[7]Shibata T,Kotani K,Ohmi T.ISSCC Digest Technical papers,1993;FA 15.3:238
  • 7[8]Mehrvarz H R,Kwok C Y.IEEE J Solid-State Circuits,1996;31(8):1123
  • 8[9]K D.Solid-State Technology,1998;41(3):24
  • 9[10]Shibata T,Ohmi T.Proceedings of the IEEE Hongkong Electron Devices Meeting,1997:337
  • 10Shibata T,Ohmi T. A functional MOS transistor featuring gate-level weighted sum and threshold operations[J].IEEE Trans on Electron Devices, 1992,39 (6) : 1444-1455.

共引文献9

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部