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Si基微波单片集成电路的发展 被引量:1

Development of Silicon Based MMIC
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摘要 随着半导体制造技术和材料技术的进步,Si基微波单片集成电路逐渐向高频、高线性、低噪声、低成本方向发展。介绍了近年国内外在Si基微波单片集成电路在制造工艺、电路结构和制作材料上的革新,阐述了三维Si微波单片集成电路技术、隔离槽技术、Si高阻衬底技术、SiGe技术等对Si基微波单片集成电路发展的影响,并列举了一些典型的应用。最后展望了Si基微波单片集成电路的发展前景。 With the development of semiconductor manufacture and material technology, Si based microwave monolithic integrated circuit (MMIC) turn to high frequency, high linearity, low noise and low eost application. The recent years international development of manufacture, circuit configuration and material technology of Si based MMIC are introduced. Deep trench isolation, Si high resistivity substrate and SiGe technology of Si based MMIC are described, and some typical applications are introduced. Finally, the future prospects of Si based MMIC are viewed.
出处 《半导体技术》 CAS CSCD 北大核心 2010年第3期205-208,281,共5页 Semiconductor Technology
关键词 硅基微波单片集成电路 三维 隔离槽 硅高阻硅衬底 锗硅 Si based MMIC 3D deep trench isolation Si high resistivity substrate SiGe
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  • 1KUKIELKA J F, SNAPP C P. Wideband monolithic cascadable feedback amplifiers using silicon bipolar technology [J]. Monolithic Microwave Integrated Circuits, IEEE Press, 1985 : 330-331.
  • 2ARMIJO C T, MEYER R G. A new wideband Darlington amplifier [ J ]. IEEE JSSC, 1989,24 (4) : 1105-1109.
  • 3STARK M. Plasma etching in a trio-electrode dual frequency reactor for trench application [ J ]. Tegal Process Review, 1987, 1 (4) : 1-2.
  • 4WANG Q P, ZHANG Z F, LI K C, et al. A deep trench isolation for silicon [C]//Proc of Solid-State and Integrated Circuit Technology. Beijing, China, 1998 : 172-175.
  • 5LOT C, ZHANG J S, HUANG H C, et al. Planarization of deep trench with locos for silicon monolithic microwave integrated circuit [ C ]//Proc of Int Electron Devices and Materials Syrup. Hsinchu, Taiwan, China, 1994 : 11-51-208-11-51-211.
  • 6KIPNIS I, KUKIELKA J F, LEUNG C C,et al.A wideband, low-power, high-sensitivity and small-size 2.5 GHz static frequency divider IC [ C] //// Proc of Bipolar Circuits and Technology Meeting. Minneapolis, MN, USA, 1988 : 102-105.
  • 7WHOLEY J, KIPNIS I, SNAPP C. Silicon bipolar double balanced active mixer MMIC's for RF and microwave applications up to 6 GHz [ C ]//Proc of IEEE Microwave and Millimeter-Wave Monolithic Circuits Symp. Long Beach, CA, USA, 1989 : 133-137.
  • 8TOKUMITSU T, NISHIKAWA K, KAMOGAWA K, et al. Threedimensional MMIC technology for multifunction integration and its possible application to masterslice MMIC [C]//Proc of IEEE Microwave and Milliterwave Monohthic Circuits Symp. San Francisco, CA, USA, 1996 : 85-88.
  • 9TOYODA I, TOKUMITSU T, AIKAWA M, et al. Highly integrated three-dimensional MMIC single-chip receiver and transmitter [J]. IEEE Trans on Microwave Theory and Techniques, 1996,44 ( 12 ) : 2340-2346.
  • 10NISHIKAWA K, TOYODA I, KAMOGAWA K, et al. Threedimensional silicon MMIC' s operating up to K-band [J]. IEEE Trans on Microwave Theory and Technology, 1998,46 (5) : 677-684.

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