摘要
随着半导体制造技术和材料技术的进步,Si基微波单片集成电路逐渐向高频、高线性、低噪声、低成本方向发展。介绍了近年国内外在Si基微波单片集成电路在制造工艺、电路结构和制作材料上的革新,阐述了三维Si微波单片集成电路技术、隔离槽技术、Si高阻衬底技术、SiGe技术等对Si基微波单片集成电路发展的影响,并列举了一些典型的应用。最后展望了Si基微波单片集成电路的发展前景。
With the development of semiconductor manufacture and material technology, Si based microwave monolithic integrated circuit (MMIC) turn to high frequency, high linearity, low noise and low eost application. The recent years international development of manufacture, circuit configuration and material technology of Si based MMIC are introduced. Deep trench isolation, Si high resistivity substrate and SiGe technology of Si based MMIC are described, and some typical applications are introduced. Finally, the future prospects of Si based MMIC are viewed.
出处
《半导体技术》
CAS
CSCD
北大核心
2010年第3期205-208,281,共5页
Semiconductor Technology