Ⅲ-Ⅴ族半导体化合物快速热退火扩Zn方法研究

Study on Zn Diffusion in Ⅲ-Ⅴ Semiconductor Compounds Using Rapid Thermal Annealing Process

以GaAs和InP材料为例,对化合物半导体材料中的快速热退火扩Zn可行性进行比较分析,研究表明,化合物半导体材料中快速热退火扩Zn可行性与化合物半导体材料的分解温度有着密切关系。化合物半导体材料分解温度越低,对扩散源、帽层和阻挡层要求越高。针对InP材料高于360℃就分解、低温Zn扩散困难的特点,提出了直接溅射Zn层在410℃低温扩散的方法。对InP快速热退火扩散结果进行分析,初步分析表明其掺杂机理是形成合金结。

Zn diffusion in Ⅲ-Ⅴ semiconductor compounds （GaAs and InP） using rapid thermal annealing （RTA） process was investigated. The feasibility of this method mostly depends on decompounded temperature of Ⅲ-Ⅴ semiconductor compounds. The lower the decompounded temperature, the higher the requirements on the diffusion layer, diffusion prevented layer and cap layer. As the decompounded temperature of InP is 360 ℃, it is hard to carry out Zn diffusion in low temperature, a method of Zn diffusion from direct sputtering Zn films into InP at 410 ℃ was proposed. The primary mechanism of Zn diffusion in InP is assumed that alloy junctions come into being using rapid thermal annealing.