砷化镓晶体缺陷显示的可靠性分析

Reliability Analysis of Revealing GaAs Crystal Defect

为了提高砷化镓缺陷检测的可靠性，对熔融ＫＯＨ腐蚀法、ＡＢ腐蚀法和超声ＡＢ腐蚀法三种腐蚀方法进行了可靠性对比实验研究．发现超声ＡＢ腐蚀法操作简便，适用范围广，显示缺陷的可靠性和充分性都很高．同时具有分辨能力强，获得缺陷信息量多等特点，是一种值得推广的ＧａＡｓ晶体缺陷检测方法．作者提出了超声ＡＢ腐蚀检测ＧａＡｓ晶体缺陷的检测工艺条件．并提供了部分有代表性的照片．可作有关部门在今后修订国家标准时参考．

In order to improve the reliability of GaAs defect detection , We make the experiment of comparative research on the melting KOH method , AB etching and ultrasonic AB etching find Ultrasonic AB etching is easily to be operated,widely applied , and has high reliability to reveal defect.At the same time,it has characteristic of high distinguish to revealing a lot of defect information.So it is a detection method worthy of being applied.The paper suggests detection technological condition of revealing GaAs crystal defect and typical photograph.We hope using ultrasonic AB etching will be taken into consideration in revising GB in the future.