NTDCZSi中氧的沉淀与吸除

Oxygen Gettering and Precipitation in NTDCZSi

在适当温度退火时，中子嬗变掺杂（NTD）的CZSi中产生的大量亚稳态辐照缺陷在退火过程中会增强氧的外扩散与沉淀。根据CZSi中热施主与电阻率的关系，利用扩展电阻（SR－100C）法测量了硅片退火后氧的纵向分布形式，发现辐照缺陷的存在影响了硅中氧的扩散与沉淀行为。

The out-diffusion and precipitation of oxygen was increased in neutron transmutation doped Czochralskisilicon (NTDCZSi) when it was annealed at a proper temperature. The annealing behavior of the vast amount ofmetastable defecte induced by neutron irradiation have been investigated. According to the relationship between thethermal donor and resistivity in CZSi, the vertical distribution of oxygen from surface was determined by Spread Resistivity Instrument (SR-100C). It is found that the presence of irradiation damage and defects affect the diffusion andprecipitation behavior of oxygen in NTDCZSi.