氮化钽薄膜的制备及其血液相容性研究

Research on Synthesis of Tantalum Nitride Film and Its Blood Compatibility

本文利用磁控反应溅射技术制备氮化钽薄膜，对磁控反应溅射制备氮化钽薄膜的工艺参数（包括氮分压比、加热温度、溅射压力、溅射电流）用正交设计进行优化。研究表明，影响氮化钽薄膜结合力的主要因素为溅射压力和加热温度，氮分压比、溅射电流为次要因素；氮分压对氮化钽薄膜的硬度影响较大。动态凝血及血小板粘附实验研究表明，氮化钽薄膜的血液相容性性能优于热解碳（LTIC）。

The tantalum nitride film has been deposited by the reactive magnetron sputtering. The optimum parameters including the ratio of N2 partial pressure, substrate temperature, sputtering pressure and sputtering current ofpreparing TiN film have been carried out by the orthogonal design. The results show that the sputtering pressure andsubstrate temperature have main influences on the adhesion of the film to substrate, and the N2 partial pressure andsputtering current have the less influences. The hardness of the tantalum nitride film is greatly influenced by N2 partial pressure. The results of the kinetic clotting test and the platelet adhesive test show that the blood compatibility oftantalum nitride film is better than that of LTI carbon.