摘要
用直流磁控反应溅射制备NiO/NiFe双层膜。在保持NiFe层的厚度20nm不变的条件下,发现尽管没有用外加磁场引导单向各向异性,由于底盘旋转等因素的影响,NiO(70nm)/NiFe(20nm)双层结构仍显示较好的单向各向异性,交换耦合场可达30Oe以上。通过改变NiO层的厚度、溅射气体Ar分压以及溅射气体与反应气体的比例Ar/O2,研究了反铁磁层厚度以及溅射条件对交换耦合场的影响。
The NiO/NiFe bilayers were fabricated with DC magnetron sputtering. Keeping the thickness of the NiFe layers constant at 20nm, it was found that the as deposited bilayers of NiO(70nm)/NiFe(20nm) showed fairly good unidirectional anisotropy. The exchange field could be as large as 30 Oe although there was no magnetic field to induce an unidirectional anisotropy. The changes of the exchange fields with the thickness of NiO layers, the partial pressure of Ar and the ratio of Ar/O 2 were observed. The mechanisms of these changes were discussed.
出处
《功能材料与器件学报》
CAS
CSCD
1998年第4期268-272,共5页
Journal of Functional Materials and Devices
基金
上海市应用材料研究与发展基金