超高真空电子束蒸发合成晶态AlN薄膜的研究

SYNTHESIS OF AlN FILMS BY NITRIDATION OF Al FILMS EVAPORATED ON Si(100) SUBSTRATE BY UHV ELECTRON BEAM

用超高真空蒸发Ａｌ膜，结合氮化后处理工艺在Ｓｉ（１００）衬底上制备了ＡｌＮ晶态薄膜。用Ｘ射线衍射（ＸＲＤ）、傅立叶变换红外光谱（ＦＴＩＲ）和Ｘ射线光电子能谱（ＸＰＳ）等测试分析技术研究了薄膜的微结构特征。结果表明：经过１００００Ｃ３０分钟氮化处理后，能形成具有（００２）择优取向的ＡｌＮ薄膜。

Owing to many outstanding properties, aluminum nitride has attracted considerable attention. In this paper, AlN thin films have been grown on Si(100) substrates by UHV electron beam evaporation of Al followed by nitridation. XRD, FTIR and XPS are employed to characterize AlN films. Results indicated that the deposited aluminum films with thickness of 200nm has completely reacted with nitrogen after nitridation at 1000 0C for 30 minutes and the AlN films with the preferred orientation of (002) are obtained.