氨气流量对GaN纳米线生长及性能的影响

Effect of the ammonia flow rate on the growth and characterization of GaN nanowires

利用磁控溅射技术在Si衬底上沉积Ga2O3/Co薄膜,然后在不同氨气流量下于950℃退火15min。采用X射线衍射(XRD)、扫描电子显微镜(SEM)、傅立叶红外吸收(FTIR)光谱、高分辨透射电子显微镜(HRTEM)和光致发光谱(PL)对样品进行了分析表征。结果表明,氨气流量对GaN纳米线的生长及性能有很大影响。简单讨论了GaN纳米线的生长机理。

Ga2O3/Co films were deposited on the Si substrates through magnetron sputtering technique.Then the films were annealed at 950℃ for 15min at different ammonia flow rate.The samples were characterized by X-ray diffraction（XRD）,scanning electron microscopy（SEM）,Fourier transformed infrared（FTIR） spectroscopy,high resolution transmission microscopy（HRTEM） and photoluminescence（PL）.The results show that the ammonia flow rate had a great effect on the growth and characterization of GaN nanowires.The growth mechanism is briefly discussed.