摘要
讨论了快擦写存储器典型位元结构及其存储信息原理，详细论述了目前广泛使用的或非和与非两种结构的快擦写存储矩阵的结构组成和工作原理。
The paper discusses the typical cell structure of flash memory and its principle of information storage. In addition, the organizations and working mechanisms of the NOR and NAND flash memory matrices, which are widely applied at present, are detailed.
出处
《国防科技大学学报》
EI
CAS
CSCD
1998年第6期37-40,共4页
Journal of National University of Defense Technology
关键词
存储位元
存储信息原理
快擦写存储器
存储器
memory cell, information storage principle, NOR memory matrix, NAND meory matrix.
