摘要
提出了SiGe和SiGeC异质结晶体管基区渡越时间的一种闭式物理模型,该模型考虑了电子温度效应.计入薄基区内强电场(该电场源起于Ge,C元素的掺杂)引起的电子温度变化,得到的基区渡越时间值与漂移-扩散模型有所不同.随着Ge含量的增加,两者的差别不能再忽略.
A closed-form physical model was given for SiGe and SiGeC HBT considering electron temperature effect. Incorporating electron temperature variation induced by high electric field （caused by Ge, C gradient） in the thin base, the base transit time shows different values compared with the driftdiffusion model. As Ge gradient increases, the difference can no longer be neglected.
