摘要
The performance of amorphous silicon(a-Si:H) /crystalline silicon(c-Si) heterojunction is studied,and the effects of the emitter layer thickness,doping concentration,intrinsic layer thickness,back heavily-doped n layer,interface state and band offset on the optical and electrical performance of bifacial heterojunction with intrinsic thin-layer(HIT) solar cells on ntype silicon substrates are discussed.It is found that the HIT solar cells on n-type substrates can obtain a higher conversion efficiency than those on p-type substrates by calculating the band diagrams and parameters of HIT solar cells.
The performance of amorphous silicon （a-Si：H） / crystalline silicon （c-Si） heterojunction is studied, and the effects of the emitter layer thickness, doping concentration, intrinsic layer thickness, back heavily-doped n layer, interface state and band offset on the optical and electrical performance of bifacial heterojunction with intrinsic thin-layer （HIT） solar cells on n- type silicon substrates are discussed. It is found that the HIT solar cells on n-type substrates can obtain a higher conversion efficiency than those on p-type substrates by calculating the band diagrams and parameters of HIT solar cells.
基金
supported by the Project of Economy and Information Technology Developments of Shanghai,China(No.07XI2-016)
the Postdoctor Science Foundation of Shanghai,China (No.08R214202)
