期刊文献+

Restraining for switching effects in an AC driving pixel circuit of the OLED-on-silicon 被引量:2

Restraining for switching effects in an AC driving pixel circuit of the OLED-on-silicon
原文传递
导出
摘要 The AC driving scheme for OLEDs,which uses the pixel circuit with two transistors and one capacitor(2T1C),can extend the lifetime of the active matrix organic light-emitting diode(AMOLED) on silicon,but there are switching effects during the switch of AC signals,which result in the voltage variation on the storage capacitor and cause the current glitch in OLED.That would decrease the gray scale of the OLED.This paper proposes a novel pixel circuit consisting of three transistors and one capacitor to realize AC driving for the OLED-on-silicon while restraining the switching effects.Simulation results indicate that the proposed circuit is less sensitive to switching effects.Also,another pixel circuit is proposed to further reduce the driving current to meet the current constraints for the OLED-on-silicon. The AC driving scheme for OLEDs, which uses the pixel circuit with two transistors and one capacitor (2T1C), can extend the lifetime of the active matrix organic light-emitting diode (AMOLED) on silicon, but there are switching effects during the switch of AC signals, which result in the voltage variation on the storage capacitor and cause the current glitch in OLED. That would decrease the gray scale of the OLED. This paper proposes a novel pixel circuit consisting of three transistors and one capacitor to realize AC driving for the OLED-on-silicon while restraining the switching effects. Simu- lation results indicate that the proposed circuit is less sensitive to switching effects. Also, another pixel circuit is proposed to further reduce the driving current to meet the current constraints for the OLED-on-silicon.
出处 《Optoelectronics Letters》 EI 2010年第2期112-115,共4页 光电子快报(英文版)
基金 supported by Tianjin Municipal Key Scientific and Technological Project (No.033187011)
  • 相关文献

参考文献14

  • 1Haiqing Lin, Eric Naviasky, John Ebner, William Evans, Patrick Farrell, Mike Hufford, Gary Levy, David Wheeler, Bryan Allison and Olivier Prache, IEEE Digest of Technical Papers of ISSCC 2, 356 (2002).
  • 2WANG Hong, YU Jun-sheng, LI Lu, TANG Xiao-qing and JIANG Ya-dong, Optoelectronics Letters 5, 93 (2009).
  • 3OU Peng, YANG Gang, JIANG Quan, Jun-sheng Yu, Qipeng Wu, Fu-hai Shang, Wei Yin, Jun Wang, Jian Zhong and Kai-jun Luo, Optoelectronics Letters 5, 329 (2009).
  • 4Chih-Lung Lin and Yung-Chih Chen, IEEE Electron Device Letters 28, 129 (2007).
  • 5Chih-Lung Lin and Kuo-Chao Liao, IEEE EDSSC, 385 (2007).
  • 6Yvan Bonnassieux and Francois Anceau, SID EuroDisplay, 412 (2005).
  • 7Xingbi Chen and Qingzhong Zhang, The Theory and Design of Transistor, Second Edition, Beijing, China: Publishing House of Electronics Industry, 300 (2006). (in Chinese).
  • 8Huang Ran, Wang Xiaohui, Wang Wenbo, Du Huan and Han Zhengsheng, Journal of Semiconductors 30, 0150101 (2009).
  • 9Feng Li, Jing Fcng and Shiyong Liu, Synthetic Metals 137, 1103 (2003).
  • 10J. Shen, D. Wang, E. Langlois, W. A. Barrow, Barrow, P. J. Green, C. W. Tang and J. Shi, Synthetic Metals 111-112,233 (2000).

同被引文献33

  • 1JIANG YuXuan1, LI Zheng1, SUN YongJian1, YU TongJun1, CHEN ZhiZhong1, ZHANG GuoYi1, ZHANG GuangChen2 & FENG ShiWei2 1 State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China,2 School of Electronic Information & Control Engineering, Beijing University of Technology, Beijing 100124, China.Analysis of junction temperatures in high-power GaN-based LEDs[J].Science China(Technological Sciences),2010,53(2):297-300. 被引量:3
  • 2吴海彬,王昌铃.白光LED封装材料对其光衰影响的实验研究[J].光学学报,2005,25(8):1091-1094. 被引量:43
  • 3雷勇,范广涵,廖常俊,刘颂豪,李述体,黄琨.功率型白光LED的热特性研究[J].光电子.激光,2006,17(8):945-947. 被引量:23
  • 4徐美华,陈章进,冉峰,何幼桦.平板显示系统的最优扫描结构及分形模型[J].电子学报,2006,34(8):1376-1380. 被引量:15
  • 5张剑铭,邹德恕,刘思南,朱彦旭,沈光地.透明导电ITO欧姆接触的AlGaInP薄膜发光二极管[J].光电子.激光,2007,18(5):562-565. 被引量:7
  • 6Stewart M, Howell R S, Pires L, et al. Polysilicon TFT technology for active matrix OLED displays [J]. IEEE Transactions on Electron Devices,2001 ,48(5) :845-851.
  • 7Nathan A, Kumar A, Sakariya K, et al. Amorphous silicon thin film transistor circuit integration for organic LED displays on glass and plastic[J]. IEEE Journal of Solid-State Circuits, 2004,39(9) : 1477-1486.
  • 8Xie G H,Xue Q,Chen P,et al. Highly efficient and low- cost top-emitting organic light-emitting diodes for monochromatic microdisplays[J]. Organic Electronics, 2010, 11(3) :407-411.
  • 9Gohri V, Hofmann S, Reineke S,et al. White top-emitting organic light-emitting diodes employing a heterostructure of down-conversion layers[J]. Organic Electronics,2011, 12(12) :2126-2130.
  • 10Ventsch F, Gather M, Meerholz K. Towards organic fightemitting diode microdisplays with sub-pixel patterning [J]. Organic Electronics, 2010,11 ( 1 ) : 5 ?-61.

引证文献2

二级引证文献6

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部