摘要
The experiment results indicate that the gauge factor of highly boron doped polysilicon nanofilm is bigger than that of monocrystalline silicon with the same doping concentration, and increases with the grain size decreasing. To apply the unique properties reasonably in the fabrication of piezoresistive devices, it was expounded based on the analysis of energy band structure that the properties were caused by the tunnel current which varies with the strain change forming a tunnelling piezoresistive effect. Finally, a calculation method ofpiezoresistance coefficients around grain boundaries was presented, and then the experiment results ofpolysilicon nanofilms were explained theoretically.
The experiment results indicate that the gauge factor of highly boron doped polysilicon nanofilm is bigger than that of monocrystalline silicon with the same doping concentration, and increases with the grain size decreasing. To apply the unique properties reasonably in the fabrication of piezoresistive devices, it was expounded based on the analysis of energy band structure that the properties were caused by the tunnel current which varies with the strain change forming a tunnelling piezoresistive effect. Finally, a calculation method ofpiezoresistance coefficients around grain boundaries was presented, and then the experiment results ofpolysilicon nanofilms were explained theoretically.
基金
supported by the National Natural Science Foundation of China(No.60776049)
the Science and Technology Foundation of Liaoning Province ofChina(No.20072036)
the Fund ofLiaoning Province Education Department of China(No.2007T130).
