摘要
This paper describes the performance of AIGaN/GaN HEMTs with 2.4μm source-drain spacing. So far these are the smallest source-drain spacing AIGaN/GaN HEMTs which have been implemented with a domestic wafer and domestic process. This paper also compares their performance with that of 4μm source-drain spacing devices. The former exhibit higher drain current, higher gain, and higher efficiency. It is especially significant that the maximum frequency of oscillation noticeably increased.
This paper describes the performance of AIGaN/GaN HEMTs with 2.4μm source-drain spacing. So far these are the smallest source-drain spacing AIGaN/GaN HEMTs which have been implemented with a domestic wafer and domestic process. This paper also compares their performance with that of 4μm source-drain spacing devices. The former exhibit higher drain current, higher gain, and higher efficiency. It is especially significant that the maximum frequency of oscillation noticeably increased.
基金
supported by the National Natural Science Foundation of China(No.60890191).
