复合量子阱Ge_(0.3)Si_(0.7)/(Ge_(0.3)Si_(0.7))_m-(Si)_m/Ge_(0.3)Si_(0.7)的电子能带结构

The Electronic Band Structures of Complex Quantum Wells Ge_(0.3)Si_(0.7)/(Ge_(0.3)Si_(0.7))_m-(Si)_m/Ge_(0.3)Si_(0.7)

采用建立在经验赝历势基础上的推广k·P方法计算了复合量子阱Ge0.3Si0.7／（Ge0.3Si0.7）m-（Si）m／Ge0.3Si0.7的电子束缚能组及其活界面方向的色激关系,并与通常的单带模型下的包络函数方法的计算结果进行了比较。结果表明由于超晶格中子能带的形成,邻近能带间的互作用使通常单带模型下的包络函数方法不再能适用于复合量子阱的计算。计算结果也表明复合量子阱的电子束缚能级沿界面方向在kx＜0.1（2π/a）范围内基本上不随kx变化。

With using a generalized k·p method based on empirical pseudopotential approach, the electronic binding energy levels and their dispersions in the interface plane of complex quantum wells Ge0.3Si0.7/ (Ge0.3Si0.7)m-(Si)m/Ge0.3Si0.7 are calculated. The results are compared with those calculated by usual envelopment function method in the singlc band model and show that the smaller gaps between sub-band levels in the superlattices (Ge0.3Si0.7)m- (Si)m lead to the invalidity of usual envelopment function method when being applied to the complex quantum wells.The results also show that the electronic binding energy levels are basically independent on the wave vectors k. in the interface plane as kx<0. 1 (2π/a).