摘要
在气体样品池条件下,用调频半导体激光器激发Rb原子至Rb(5Pj)态,通过测量样品池前后光强比,得到不同温度下样品的吸收系数.对于Rb(5S1/2→5Pj)的跃迁,可获得g2/g1值和5Pj的寿命值(我们取j=1/2,即用D1线794nm计算),从而得出不同温度下样品的基态原子密度.实验结果表明:基态原子的密度N随着温度的升高而增大.通过与其它实验结果进行比较,得出在低温下的数据比较准确,可见利用光学吸收方法测量低激发态原子密度较为理想.
By Measuring light intensity of laser per and post the gas cell conditions, absorption coefficient tained. There are certain relationships between the absorption coefficient and the density of the was obground state Rb （5 s） atoms. The results showed that the density of ground state Rb atom tends to increase with the increase of temperature. low temperature. Compared with other experimental results, more accurate result is obtained at
出处
《通化师范学院学报》
2010年第2期16-17,共2页
Journal of Tonghua Normal University
基金
通化师范学院院级项目(200839)
关键词
RB
基态原子密度
吸收系数
rubidium
ground state atomic density
absorption coefficient
