摘要
Abstract A refined one of our exactly solvable trapezoidal barrier potential model [Thin Solids Films, 414 (2002) 136)] for metal-insulator-metal tunnel junctions has Seen presented. According to the refined model, the longitudinal kinetic energy (ExL) and the effective mass (m^*L) of the electron8 in the electrode on the left of the barrier distinguish from that on the right. It is found that as ExL is greater than the shorter side of the resultant trapezoidal barrier potential, there will be a coexistence of the tunneling and propagating in the barrier. The results demonstrate that the damped oscillating electron waves localized in the propagating barrier subregion lead to the oscillation and enhancement in the transmission coefficient DT and dwell time TD. For the barrier height φ1=2.6 eV and φ2 = 1.4 eV, the width d=22 A and ExL = 1.0 eV, DT and TD have a maximum of 0.054 and 0.58x10^-15 s at V = 2.04 V and 2.18 V, respectively. This suggests that a real tunneling may be a hybrid.
基金
Supported by the Science and Technology Foundation of Shenzhen under Grant Nos. 200604 and 200606