摘要
提出了一种横向微堆积大功率半导体激光器线阵的新结构,在相同的注入电流下提高了器件的输出光功率,有效缓解了大电流下的器件热烧毁和光学灾变性毁坏(COD)。制备了横向微堆积三有源区半导体激光器线阵列,在50A的工作电流下,其输出光功率可达到79.3W,斜率效率可达1.81W/A,是传统单有源区bar条的两倍多。
A new structure of transverse micro-stack semiconductor laser bars is put forward to improve the output optical power of semiconductor laser bars at low injection current, which can effectively lessen the thermal damage and catastrophic optical damage（COD）. Micro- stack tunnel regeneration tri-active regions laser diode bars are fabricated. Experiments show that the output optical power is 79.3 W and slope efficiency exceeds 1.81 W/A under 50 A driving current, which is two times of that of the traditional single-active bars.
出处
《半导体光电》
CAS
CSCD
北大核心
2010年第1期20-22,100,共4页
Semiconductor Optoelectronics
基金
国家重点基础研究发展计划资助项目(2006CB604902)
国家自然科学基金项目(60506012)
关键词
激光技术
半导体激光器线阵
横向微堆积
laser technique
laser diode bars
thermal characteristic
transient temperature
