SOI亚微米波导光栅的设计与制作

Design and Fabrication of Silicon-on-insulator Sub-micrometer Waveguide Grating

报道了SOI基亚微米小尺寸波导光栅器件的设计、制作与测试结果。提出了波导与光栅同步制作的方案,避免了套刻,节约了成本。实验中采用电子束光刻(EBL)、感应耦合等离子体(ICP)刻蚀等先进半导体工艺技术,结合图形补偿等技术手段,完成了亚微米波导光栅的制作。光栅周期为350nm,占空比16∶19。采用该光栅做反射镜,制作了法布里-珀罗(F-P)谐振腔,经测试得到了与模拟相吻合的结果,峰谷比达到11dB。

Reported are the design, fabrication and characteristics of silicon-on-insulator （SOD sub-micrometer waveguide grating. Advanced equipments of EBL and ICP-RIE together with the pattern compensating method are utilized to fabricate the waveguide grating devices. In the fabrication processes, a method that the waveguide and the grating can be etched simultaneously was introduced, from which the overprint process was avoided and the cost is lowered. The period of the grating is 350 nm, the duty cycle is 16 ~ 19. Finally, a Fabry-Perot cavity using a pair of the aforementioned gratings as the front and back reflection mirrors was demonstrated. The measured transmission spectrum meets the simulation result as expected, showing a peak-to-valley ratio of 11dB.