用于圆筒状零件内表面等离子体浸没离子注入的偏转电场法

Deflecting Electric Field Method for Inner Surface Plasma Immersion Ion Implantation of a Bore

等离子体浸没离子注入（PIII）为解决束线离子注入所难以解决的圆筒状零件内表面注入处理问题提供了新的可能途径，但在应用中却受到注入能量和注入剂量偏低的限制．本文针对这一问题提出了偏转电场法用以提高内表面注入的能量和注入剂量．实验结来表明，采用这一方法可以有效地改善圆筒状零件内表面注入的注入情况．注入峰值深度提高了25％～100％，注入剂量提高了73％～113％．注入脉冲宽度的延长有利于注入离子向筒内部深入，利于筒深处注入效果的改善．

Plasma immersion ion implantation(PIII) has provided a new method to modify innersurface of a bore, which is difficult for line beam ion implantation to deal with. But it isrestricted in application by low impact energy and retained dose. A deflecting electric fieldmethod for inner surface PIII is presented in this paper to increase both impact energy andretained dose. The experiment result shows that the implantation effect has been greatlyimproved. The peak implant depth is increased by 25%～100%, and the retained dose isincreased by 73%～113%. Increasing the duration of the pulse will lead the ions deeper intothe bore, and is useful for improving the implant effect deep in the bore.