摘要
分析了中子辐照诱导Si PIN光电二极管暗电流增大现象的机理,建立了Si PIN光电二极管的器件物理模型和中子辐照效应模型。运用MEDICI软件进行数值模拟计算,得出了1MeV中子在辐照注量为1010～1014cm-2时,Si PIN光电二极管暗电流变化的初步规律。数值模拟结果与相关文献给出的实验结果吻合较好。
The mechanism of dark current increase in Si PIN photodiode induced by neu- tron irradiation was analyzed. The device physics and neutron irradiation models were presented to simulate dark current in Si PIN photodiode by MEDICI software. The pri- mary regularity of dark current increase in Si PIN photodiocle was concluded by neutron irradiation with the energy of 1 MeV and at the fluence of 10^10～10^14 cm 2. The simulation results are in agreement with the experimental results from relevant literature.
出处
《原子能科学技术》
EI
CAS
CSCD
北大核心
2010年第2期220-223,共4页
Atomic Energy Science and Technology
关键词
PIN光电二极管
中子辐照
暗电流
数值模拟
PIN photodiode
neutron irradiation
dark current
numerical simulation
