[Si(Pc)O]_n晶体在NaCl单晶衬底上的外延生长

Epitaxial Growth of n Crystal on a NaCl Single Crystal Substrate

电子衍射实验表明，当单体酞菁硅二醇Ｓｉ（Ｐｃ）（ＯＨ）２在ＮａＣｌ单晶（１００）解理面上气相沉积时，所得的聚酞菁硅氧烷［Ｓｉ（Ｐｃ）Ｏ］ｎ薄膜晶体中的分子链轴相对于膜面的取向，随衬底温度的升高而发生有规律的变化：不确定（１５０℃）→平行→平等＋垂直→垂直（３５０℃）。高分辨电子显微像显示，与其在固态聚合时的情形不同，气相沉积时所得的［Ｓｉ（Ｐｃ）Ｏ］ｎ微晶主要属于四方晶系，只有少量属于带心的正交晶系。上述平行或垂直。

Electron diffraction results indicated that the orientation of the molecular chain axis in the resulting poly(phthalocyaminatosiloxane),n,film crystal while its monomer,Si(Pc)(OH) 2,vapour was depositing on a newly cleaved (100) plane of NaCl single crystal changed regularly with the substrate temperature increasing as follows:indefinite (～150℃)→parallel(295℃)→parallel+perpendicular→perpendicular(≥350℃).High resolution electron micrographs showed that the crystal system of the most of the resulting n micro crystals from vapour deposition is tetragonal one which is different from that resulting from solid stste polymerization,only a little is centred orthogonal one.Above mentioned tetragonal or orthogonal,parallel or perpendicular crystallizing behaviour is possibly related to induced crystallization by superlattice of the substrate. 