摘要
由于ＧａＡｓ与ＡｌＡｓ晶格常数相近，ＧａＡｓ晶格常数为０．５６５３５ｎｍ，ＡｌＡｓ的晶格常数为０．５６６０５ｎｍ，当固熔体中Ａｌ组份ｘ值从０变到１时，晶格常数变化约为０．１５％．因此，在ＧａＡｓ衬底上生长Ｇａ１－ｘＡｌｘＡｓ时，在界面处的失配位错少，...
In this paper emitting specta of Ga 1- x Al x As material in active region is measured using eletroluminescence. The x values region is obtained from formulation. The method has accurate, quick and simple excellence. It is good measure method for middle measurement of product.
出处
《发光学报》
EI
CAS
CSCD
北大核心
1998年第4期361-363,共3页
Chinese Journal of Luminescence
基金
863重大项目资助
关键词
外延材料
电致发光
x值
镓铝砷
铝组分
Ga 1- x Al x As epitaxial material, electroluminescence, x values
