摘要
研究一种新型双金属接触GaAs半导体探测器的性能,测量了(241)Am5.48MeVα粒子、(57)Co122keV的光子和(90)Sr2.27MeVβ粒子的最小电离粒子谱,比较了一个3×3mm2的GaAs芯片在经过(137)Cs662keV光子约1300rad辐照前后的电荷收集效率和能量分辨率.测量结果显示这种新型金属─半导体─金属(MSM)结构的半导体探测器不仅在室温下对各种粒子具有良好的探测能力,而且具有很好的抗辐照性能.
Properties of a new kind of double metal contact GaAs semiconductors have been investigated. We measured the spectra of 5.48MeV α particles from (241)Am,122keV photons from (57)Co and 2.27MeV MIPs from (90)Sr and compared the cce and FWHM of a 3×3mm2 GaAs detector before and after 1300rad 662keV photons from (137)Cs. The test results show that these new Metal-Semiconductor-Metal(MSW) structure semiconductor detectors not only have good particle detection ability at room temperature but also have excellent radiation hardiness.
出处
《高能物理与核物理》
CSCD
北大核心
1998年第12期1092-1099,共8页
High Energy Physics and Nuclear Physics
基金
国家自然科学基金