新型MSM结构砷化镓半导体探测器的性能

Properties of a New Kind of MSM Structure Gallium Arsenide Detectors

研究一种新型双金属接触GaAs半导体探测器的性能，测量了（241）Am5．48MeVα粒子、（57）Co122keV的光子和（90）Sr2．27MeVβ粒子的最小电离粒子谱，比较了一个3×3mm2的GaAs芯片在经过（137）Cs662keV光子约1300rad辐照前后的电荷收集效率和能量分辨率．测量结果显示这种新型金属─半导体─金属（MSM）结构的半导体探测器不仅在室温下对各种粒子具有良好的探测能力，而且具有很好的抗辐照性能．

Properties of a new kind of double metal contact GaAs semiconductors have been investigated. We measured the spectra of 5.48MeV α particles from (241)Am,122keV photons from (57)Co and 2.27MeV MIPs from (90)Sr and compared the cce and FWHM of a 3×3mm2 GaAs detector before and after 1300rad 662keV photons from (137)Cs. The test results show that these new Metal-Semiconductor-Metal(MSW) structure semiconductor detectors not only have good particle detection ability at room temperature but also have excellent radiation hardiness.