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Tracing Nucleation and Growth on Atomic Level in Amorphous Sodium by Molecular Dynamics Simulation 被引量:2

Tracing Nucleation and Growth on Atomic Level in Amorphous Sodium by Molecular Dynamics Simulation
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摘要 Crystallization of amorphous Na is simulated by using the molecular dynamics method, and the evolutions of atomic clusters are traced by the cluster-type index method (CTIM) we proposed previously. It is demonstrated that the crystallization process exhibits three distinct stages of nucleation, subsequent growth of nuclei and coarsening of crystal grains. Both the size and the internal structure of a cluster play crucial roles in determining whether it is a nucleus. The cluster tracing analysis can identify different crystallization stages more clearly and accurately than other methods. Meanwhile, the simulation results can provide a reasonable explanation at an atomic level for the experimental phenomenon obtained previously. Crystallization of amorphous Na is simulated by using the molecular dynamics method, and the evolutions of atomic clusters are traced by the cluster-type index method (CTIM) we proposed previously. It is demonstrated that the crystallization process exhibits three distinct stages of nucleation, subsequent growth of nuclei and coarsening of crystal grains. Both the size and the internal structure of a cluster play crucial roles in determining whether it is a nucleus. The cluster tracing analysis can identify different crystallization stages more clearly and accurately than other methods. Meanwhile, the simulation results can provide a reasonable explanation at an atomic level for the experimental phenomenon obtained previously.
出处 《Chinese Physics Letters》 SCIE CAS CSCD 2010年第3期228-231,共4页 中国物理快报(英文版)
基金 Supported by the National Natural Science Foundation of China under Grant Nos 50831003 and 50571037.
关键词 Semiconductors Condensed matter: structural mechanical & thermal Semiconductors Condensed matter: structural, mechanical & thermal
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  • 1Lu K 1996 Mater. Sci. Eng. Rep. 16 161.
  • 2Lu K and Zhang X H 2000 Phil. Mag. Lett. 80 797.
  • 3Gasser U et al 2001 Science 292 258.
  • 4Steinhardt P J, Nelson D R and Ronchetti M 1983 Phys. Rev. B 28 784.
  • 5Nose S and Yonezawa F 1985 Solid State Commun. 56 1009.
  • 6Jonsson H and Andersen H C 1988 Phys. Rev. Lett. 60 2295.
  • 7Honeycutt J D and Andersen H C 1986 J. Phys. Chem. 90 1585.
  • 8Moroni D, ten Wolde P R and Bolhuis P G 2005 Phys. Rev. Lett. 94 235703.
  • 9Liu J, Zhao J Z and Hu Z Q 2006 Appl. Phys. Lett. 89 031903.
  • 10Chen F F et al 2004 J. Chem. Phys. 120 1826.

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