摘要
InAlN/GaN 异质接面结构在二英寸的 c 脸(0001 ) 上被种由 metalorganic 的蓝宝石底层化学蒸汽免职。AlN 和 AlGaN 夹层有意被插入到结构改进电的性质。359/sq 和最高的房间温度的最低的表抵抗 1051 cm2 V 的二维的电子气体(2DEG ) 活动性 ? 1s ? 1 与 1.3 nm 的 AlN 厚度在结构被获得。有 2 nm 的 AlN 厚度的结构展出 1.84 僚的最高的 2DEG 集中吗？？
InAlN/GaN heterojunction structures are grown on two-inch c-face（0001） sapphire substrates by metalorganic chemical vapour deposition. AlN and AlGaN interlayers are intentionally inserted into the structure to improve the electrical properties. The lowest sheet resistance of 359 Ω/sq and the highest room-temperature two-dimensional electron gas （2DEG） mobility of 1051 cm2 V-1s-1 is obtained in the structure with AlN thickness of 1.3 nm. The structure with AlN thickness of 2 nm exhibits the highest 2DEG concentration of 1.84×1013 cm-2. The sample with an AlGaN interlayer gives a smoother surface morphology compared to the one using an AlN interlayer, indicating potential applications of this technique in device fabrication.
