期刊文献+

Preparation of High-Density Nanocrystalline Bulk Selenium by Rapid Compressing of Melt 被引量:3

Preparation of High-Density Nanocrystalline Bulk Selenium by Rapid Compressing of Melt
下载PDF
导出
摘要 The melt's solidification behavior of elemental selenium is investigated by a series of experiments including rapid compressing to 2.8 and 3.5 GPa within 20ms respectively, slow compressing to 2.8 GPa for 20 min and natural cooling at ambient pressure. Based on the x-ray diffraction, scanning electron microscope and transmission electron microscope results of the recovered samples, it is clearly shown that homogenous nanostructures are formed only by the rapid compression processes, and that the average crystal sizes are about 18.7 and 19.0 nm in the samples recovered from 2.8 and 3.5 GPa, respectively. The relative density of the nanocrystalline bulk reaches 98.17% of the theoretical value. It is suggested that rapid compression could induce pervasive nucleation and restrain grain growth during the solidification, which is related to fast supercooling, higher viscosity of the melt and lower diffusivity of atoms under high pressure. The melt's solidification behavior of elemental selenium is investigated by a series of experiments including rapid compressing to 2.8 and 3.5 GPa within 20ms respectively, slow compressing to 2.8 GPa for 20 min and natural cooling at ambient pressure. Based on the x-ray diffraction, scanning electron microscope and transmission electron microscope results of the recovered samples, it is clearly shown that homogenous nanostructures are formed only by the rapid compression processes, and that the average crystal sizes are about 18.7 and 19.0 nm in the samples recovered from 2.8 and 3.5 GPa, respectively. The relative density of the nanocrystalline bulk reaches 98.17% of the theoretical value. It is suggested that rapid compression could induce pervasive nucleation and restrain grain growth during the solidification, which is related to fast supercooling, higher viscosity of the melt and lower diffusivity of atoms under high pressure.
出处 《Chinese Physics Letters》 SCIE CAS CSCD 2010年第3期286-289,共4页 中国物理快报(英文版)
基金 Supported by the National Natural Science Foundation of China under Grant No 10774123.
关键词 Surfaces interfaces and thin films Condensed matter: structural mechanical & thermal Nanoscale science and low-D systems Surfaces, interfaces and thin films Condensed matter: structural, mechanical & thermal Nanoscale science and low-D systems
  • 相关文献

参考文献30

  • 1Birring R, Glciter H and Klein H P 1984 Phys. Lett. A 102 365.
  • 2Gleiter H 2000 Acta Mater. 48 1.
  • 3Song X Y, Zhang J X, Yue M, Li E D, Zeng H, Lu N D, Zhou M L and Zuo T Y 2006 Adv. Mater. 18 1210.
  • 4Qin Y, Zhu Y and Li Z Q 1993 Chin. Phys. Lett. 10 609.
  • 5Nieman G W, Weertman J R and Siegel R W 1991 J. Mater. Res. 6 1012.
  • 6Fougere G E, Weertman J R and Siegel R W 1995 Nanostruct. Mater. 5 127.
  • 7Konrad H, Haubold T, Birringer R and H Gleiter 1996 Nanostruct. Mater. 7 605.
  • 8Horst Hahn 1997 Nanostruct. Mater. 9 3.
  • 9Koch C C and Whittenberger J D 1996 Intemrrtdlics 4 339.
  • 10Cheng S, Ma E, Wang Y M, Kecskes L J, Youssef K M, Koch C C, Trociewitz U P and Han K 2005 Acta. Materialia 53 1521.

同被引文献5

引证文献3

二级引证文献3

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部