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植入型心律转复除颤器导致误放电8例

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摘要 目的探讨植入型心律转复除颤器(ICD)导致的误放电原因,为避免和减少误放电提供参考。方法分析8例患者共植入11台ICD的临床随访资料。8例患者7例为男性,1例女性,其中单腔ICD 7台,双腔ICD 3台,三腔植入型心律转复除颤器(CRT-D)1台。随访2~12年,平均7年。结果随访中除1例死亡外其余患者均存活。ICD共检出心律失常568次,启动治疗程序125次,其中误放电16次(12.8%),大部分发生在早年植入ICD的3例患者中。误放电原因包括:感知窦性心动过速3次,占误放电的18.8%,电磁干扰4次,占25%,电极导线绝缘层破损干扰9次,占56.3%。结论ICD误放电会给患者带来极大的身心伤害,应该受到重视。
出处 《广东医学》 CAS CSCD 北大核心 2010年第3期353-355,共3页 Guangdong Medical Journal
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