摘要
以双极性小分子4,9-二(4-(2,2-二苯乙烯基)苯基)萘并[2,3-c][1,2,5]噻二唑(BDPNTD)为发光层,制备得到了单层非掺杂红色荧光有机发光二极管.通过在阳极ITO与有机层BDPNTD之间插入1nm厚的WO3或MoO3薄膜,获得了单层有机发光二极管:起亮电压为2.4V,最大发光亮度为4950cd·m-2,发光波长为636nm,CIE坐标约为(0.65,0.35).这证明了作为修饰层的WO3或MoO3薄膜可以改进ITO/BDPNTD界面的空穴注入,进而在器件中实现空穴与电子的平衡.
Non-doped red-emitting electrofluorescent single-layer organic light-emitting devices based on an ambipolar small molecule,4,9-bis(4-(2,2-diphenylvinyl)phenyl)naphtho[2,3-c][1,2,5] thiadiazole (BDPNTD),were studied.A WO3 or MoO3 buffer layer with an optimized thickness of 1 nm was used and the single-layer device has a low turn-on voltage (2.4 V) and a high luminance (4950 cd·m^-2).The maximum emission wavelength was at about 636 nm and the CIE coordinates are at about (0.65,0.35).We confirmed that the WO3 or MoO3 buffer layer can improve hole injection at the ITO/BDPNTD interface and it creates a hole-electron balance in these devices.
出处
《物理化学学报》
SCIE
CAS
CSCD
北大核心
2010年第3期531-534,共4页
Acta Physico-Chimica Sinica
基金
supported by the National Natural Science Foundation of China (50873055)
National Key Basic Research Program of China(2006CB806203)~~
关键词
有机发光二极管
单层
非掺杂
红色荧光
双极性
ITO修饰层
Organic light-emitting device
Single-layer
Non-doped
Red-emitting electrofluorescent
Ambipolar
ITO buffer layer