CdS多晶薄膜的电学性质

The electrical properties of cadmium sulphide polycrystalline films

用化学池沉积方法（ＣＢＤ）制备了ＣｄＳ多晶薄膜，并对薄膜进行了退火处理，测量了不同ＣｄＳ薄膜光电导、暗电导和电导－温度关系，计算了电导激活能。结果表明：刚沉积的ＣｄＳ暗电导率为１０－６Ω－１·ｃｍ－１，比光电导率低二个数量级，退火后，电导升高，电导激活能减小。Ｘ射线衍射分析表明，经退火后，ＣｄＳ薄膜发生相变，由立方结构变成六方结构。对上述结果进行了讨论。

Cadmium sulphide (CdS) polycrystalline films are prepared by chemical bath deposition (CBD) technique followed by annealing treatment.The photo- and dark-conductivity of the films are measured along with the dependence of dark-conductivity on temperature.The activation energy is calculated.The result shows that the dark-conductivity for as-deposited samples is 10 -6 Ω -1 ·cm -1 which is two orders of magnitude lower than the photo-conductivity. The conductivity increases while the activation energy decreases after annealing.It is shown by X ray diffraction (XRD) that the phase of CdS films changes from cubic to hexagonal due to annealing.Discussion on these results is given.