摘要
研究了公-自转磁控溅射镀膜系统的机理。通过物理建模,使用交点采集和时间步长划分两种模型,分别计算模拟了矩形靶沉积时间的三维分布图,并讨论自转与公转转速比对沉积时间均匀性的影响。模拟结果表明:两种模型仿真结果一致,验证了理论模型的正确性。同时得到结论:此公-自转系统可以通过调节转速比的方法来改善薄膜厚度的均匀性,采用文中指定工艺参数,当转速比等于0.5的时候,薄膜厚度最均匀。仿真得到的偏差结果与实验较好的吻合。
OOPIC-PRO coftware based on Particle in Cell-Monte Carlo collision model is useed to investigate the discharge in the shadow mask plasma display panel. The main-discharge region and the striation varition have been studied wthe hte scan electrode width, the xenon proportions in gas mixture and the gas pressures are changed. The simulated results were compared with dith derect observations with an intensified charged coupled device camer. The simulated and experimental results in dicate that the main-discharge region will reduce, the striation region will enlarge and the discharge efficiency.
出处
《真空科学与技术学报》
EI
CAS
CSCD
北大核心
2010年第2期149-153,共5页
Chinese Journal of Vacuum Science and Technology
关键词
磁控溅射
矩形靶
转速比
膜厚均匀性
Magnetron sputtering, Rectangle target, Ratio of ωx/ωg, Thickness uniformity of thin film