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引入基态施主能级分裂的SiC基MOS电容模型

The New Silicon Carbide Based MOS Capacitor Model with the Valley-orbit Splitting
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摘要 基态施主能级分裂因素被引入了SiC基MOS电容模型。考虑到能级分裂后,电容C-V特性曲线平带附近的Kink效应,得到有效减弱;并且能级分裂对C-V特性的影响,随掺杂浓度的增加和温度的降低而增强,同时也与杂质能级深度相关。对于耗尽区和弱积累区,由于能级分裂的影响,电容的表面电荷面密度将分别有所增加和降低。 The valley-orbit splitting is introduced into the silicon carbide based MOS capacitor model. Under the influence of the valley-orbit splitting, the kink effect about the flat-band voltage on the C-V curves was decreased. In addition, the influence of the valley-orbit splitting on the C-V characteristics got higher with the doping concentration increasing or the temperature decreasing, and it related to the donor energy level too. The surface charge density in depletion mode was increased, and in weak inversion mode was reduced under the influence of the valleyorbit splitting.
作者 戴振清 杨瑞霞
机构地区 河北科技师范学院数理系 河北科技师范学院凝聚态物理研究所 河北工业大学信息工程学院
出处 《固体电子学研究与进展》 CAS CSCD 北大核心 2010年第1期150-154,共5页 Research & Progress of SSE
基金 河北科技师范学院博士基金资助项目
关键词 基态施主能级分裂 碳化硅 金属氧化物半导体电容 电容-电压特性 表面电荷 valley-orbit splitting SiC MOS capacitor C-V characteristics surface charge
分类号 TN386.1 [电子电信—物理电子学]
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参考文献10

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固体电子学研究与进展
2010年 第1期

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