摘要
描述了拉晶条件和磁拉法对大直径ＣＺ硅单晶中氧的控制作用，并讨论了近期发展的ＣＣＺ法和ＬＦＣＺ法中与控氧相关的问题。
This paper is concerned with the oxygen control technology which is used in CZ growth of large diameter silicon single crystal.The pulling condition adjustment and magnetic field applied CZ method are two kinds of main techniques for oxygen control.The recent development of CCZ and LFCZ method are also discussed in terms of oxygen control.
出处
《半导体技术》
CAS
CSCD
北大核心
1998年第6期46-49,共4页
Semiconductor Technology
关键词
大直径
硅单晶
磁拉法
控氧
Large diameter Silicon single crystal Magnetic field applied method Oxygen control
