摘要
介绍了Ｔｉ－Ａｕ，Ｔｉ－Ｗ－Ｐｔ－Ａｕ，Ｍｏ－Ａｕ，ＴｉＷ－Ａｕ，ＴｉＷ－Ｐｔ－Ａｕ等多种金属膜分别在４００，４２５，４５０，４７５和５００℃，３０分钟等时退火后的显微镜观察结果和典型样品的俄歇能谱分析结果。结果表明，Ｔｉ由于在Ａｕ中扩散太快，阻挡性能较差，而Ｗ，Ｍｏ，ＴｉＷ都有较好的阻挡性能。结合实际应用，ＴｉＷ－Ｐｔ－Ａｕ应是硅微波功率管的金属化的较佳选择。
The Ti Au,Ti W Po Au,Mo Au,Tiw Au,Tiw Pt Au multilayer metal thin films were prepared by magnetron sputtering and were annealed at 400℃,425℃,450℃,475℃,500℃ for 30 min in N 2.These annealed samples were analyzed with microscope and AES.The results showed that Ti was not a satisfactory diffusion barrier film due to its quick diffusion in gold,While W,Mo and TiW exhibited excellent diffusion barrier properties.TiW Pt Au metalligation is a better selection for silicon microwave power transistor according to our practice.
出处
《半导体情报》
1998年第6期35-37,44,共4页
Semiconductor Information
