摘要
介绍了微波功率管三种独立失效模式,论述了器件结温随工作条件变化的规律,指出功率管热失效更重要的因素是热斑,而不是平均结温和热阻。
Three failure modes of microwave high power transistor were presented.The change of junction temperature in transistors with operating conditions was discussed.And it is pointed out that the most significant thermal failure factor in high power transistors was heat spot rather than average junction temperature and heat resistance.
出处
《半导体情报》
1998年第6期52-54,共3页
Semiconductor Information
关键词
热时间常数
热响应
热斑
热阻
功率晶体管
Thermal time constant Thermal response Heat spot Heat resistance