摘要
概述了Ｐ波段功率管在射频脉冲条件下进行加速寿命试验的方法，对Ｐ波段功率管可靠性进行了初步预测，并分析了器件失效的原因。
This paper introduces a method to perform the accelerated life tests for P band power transistor under RF pulse condition,predicts the transistor realibility,and analysis the failure mechanism of the device.
出处
《半导体情报》
1998年第6期54-58,共5页
Semiconductor Information
