摘要
对中波ＨｇＣｄＴｅ光电导器件用不同剂量的γ射线进行辐照，测量了其辐照前后的响应光谱、体电阻和响应率、探测率的变化。实验发现γ辐照使其峰值波长和截止波长向短波方向稍许移动；器件体电阻上升；而其响应率和探测率都有不同程度的改善。
MWIR HgCdTe photoconductive device has been irradiated with different gamma doses. The response spectrum, bulk resistance and its responsivity, detectivity were measured before and after gamma irradiation. It is found that gamma irradiation makes the peak wavelength and cut-off wavelength slightly move to shorter and the bulk resistance increase a little. Its responsivity and detectivity become better than previous after irradiation.
出处
《红外与激光工程》
EI
CSCD
1998年第6期48-51,共4页
Infrared and Laser Engineering
基金
国防科技预研课题资助
