用红外反射光谱研究离子束作用后碲镉汞的表面形貌

Study on ion milled HgCdTe surface morphology by means of FTIR

对经过低能离子束刻蚀前后的碲镉汞材料表面，测量其红外反射光谱，发现在刻蚀时间较短（＜１０ｍｉｎ）的情况下可以用扩散散射模型很好地解释刻蚀前后光谱的变化，由此方法得到的表面均方根粗糙度与材料和刻蚀条件没有明显的关系，约为６０～１００ｎｍ。这一结果为研究碲镉汞的表面形貌提供了新的手段。

FTIR spectra of HgCdTe surfaces before and after ion milling were measured. It is found that the changes in spectra are explained very well with diffusion scattering model when etching time is less than 10 min. The mean square root surface roughness gained from this model is in the range of about 60～100nm, and has no apparent relationship with ion milling conditions.