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双极型静电感应晶体管特性转变机理分析

Analysis on the regime change of the BSIT Characteristics
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摘要 本文对双极型静电感应晶体管(BSIT)的工作机理进行了二维分析,给出了明确的BSIT从单极作用机制到双极作用机制的转变过程的物理图象。得到了作用机制转变时的栅压、势分布以及载流子和电场分布等的数值计算结果。 The operational regimes of the Bipolar Static Induction Transistor(BSIT) were analysed by two-dimensional numerical method. The physical processing of the change from unipolar operational regime to bipolar operational regime was described clearly. Some numerical results of the gate voltage, potential distribution, carriers and electrical field distribution in the channel et. al. were obtained.
作者 李成 李思渊
出处 《半导体杂志》 1998年第4期4-6,21,共4页
关键词 双极型 晶体管 静电感应晶体管 工作机制转变 Bipolar Static Induction Transistor Change of the operational regimes Numerical calculation
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参考文献4

  • 1Nishizawa J, Ohmi T, Jpn. J. of Appl. Phys., 1980, 19:289-293.
  • 2Salvatore Bellone.Solid-state Electronics,1985.28:317-324.
  • 3李成.硕士学位论文,BSIT 二维数值分析及其特性的研究,1995.
  • 4Salvatore Bellone,Antonio Caruso and Paolo Spririto,Solid-State Electron,1987.26:403-413.

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