摘要
本文研究了以低压化学气相淀积方法生长ＰＳＧ表面钝化膜中磷的含量对横向ＰＮＰ管放大倍数的影响。给出了工艺的实验数据，得到一个为适用于集成电路中横向ＰＮＰ管钝化膜的最佳工艺数据，在这种工艺条件下，得到ＰＳＧ膜中含磷量为４Ｗｔ．％。
The effects of phosphorus content on magnification of PNP transistor in PSG film by LPCVD have been investigated. We have obtained the best technological condition for producing PSG film in the integrated circuit. In this condition, phosphorus content in PSG film is 4Wt. percent.
